Invention Grant
- Patent Title: Electrical fuse memory
- Patent Title (中): 电熔丝记忆体
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Application No.: US13771674Application Date: 2013-02-20
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Publication No.: US08824234B2Publication Date: 2014-09-02
- Inventor: Sung-Chieh Lin , David Yen , Wei-Li Liao , Jiann-Tseng Huang , Kuoyuan (Peter) Hsu
- Applicant: Sung-Chieh Lin , David Yen , Wei-Li Liao , Jiann-Tseng Huang , Kuoyuan (Peter) Hsu
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G11C17/16
- IPC: G11C17/16
Abstract:
A method of reading an eFuse in a column of eFuse memory cells includes electrically disconnecting a first end of the eFuse from a first electrical path. A second electrical path between a second end of the eFuse and a node is activated to bypass a third electrical path, where the third electrical path includes a diode device between the second end of the eFuse and the node. A footer coupled with the node is turned on.
Public/Granted literature
- US20130155799A1 ELECTRICAL FUSE MEMORY Public/Granted day:2013-06-20
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