摘要:
Some embodiments regard a memory array that has a plurality of rows and columns. A column includes a program control device, a plurality of eFuse memory cells in the column, a sense amplifier, and a bit line coupling the program control device, the plurality of memory cells in the column, and the sense amplifier. A row includes a plurality of eFuse memory cells in the row, a word line coupling the plurality of eFuse memory cells in the row, and a footer configured as a current path for the plurality of eFuse memory cells in the row.
摘要:
A method of reading an eFuse in a column of eFuse memory cells includes electrically disconnecting a first end of the eFuse from a first electrical path. A second electrical path between a second end of the eFuse and a node is activated to bypass a third electrical path, where the third electrical path includes a diode device between the second end of the eFuse and the node. A footer coupled with the node is turned on.
摘要:
During various processing operations, ions from process plasma may be transfer to a deep n-well (DNW) formed under devices structures. A reverse-biased diode may be connected to the signal line to protect a gate dielectric formed outside the DNW and is connected to the drain of the transistor formed inside the DNW.
摘要:
The embodiments of methods and structures disclosed herein provide mechanisms of forming and programming a non-salicided polysilicon fuse. The non-salicided polysilicon fuse and a programming transistor form a one-time programmable (OTP) memory cell, which can be programmed with a low programming voltage.
摘要:
An input of a first inverter is configured to serve as an input node. An output of the first inverter is coupled to an input of a second inverter. An output of the second inverter is configured to serve as an output node. An input of a third inverter is coupled to an input of the first inverter. A gate of a first NMOS transistor is coupled to an output of the third inverter. A drain of the first NMOS transistor is coupled to the second inverter. A source of the first NMOS transistor is configured to serve as a level input node. When the input node is configured to receive a low logic level, the output node is configured to receive a voltage level provided by a voltage level at the level input node.
摘要:
A spout assembly includes an inner tube adapted to be in fluid communication and in watertight connection with a faucet body, and an outer tube telescopically fitted on the inner tube. An outer circumferential wall of the inner tube has a plurality of annular retaining grooves disposed therein and spaced apart from and aligned with one another for receiving annular elastomeric members. Each elastomeric member extends beyond the outer circumferential wall to form an annular bump portion. The outer tube is slidably fitted on the outer circumferential wall, and has an inner peripheral wall with an annular friction member to surround and in slidable contact with the outer circumferential wall. Thus, when the friction member is brought into engagement with one of the annular bump portions by sliding movement of the inner peripheral wall, the engaged annular bump portion will be deformed radially to increase the friction force therebetween so as to arrest the inner peripheral wall from moving relative to the outer circumferential wall.
摘要:
A memory cell is disclosed, including a write access transistor coupled between a storage node and a write bit line, and active during a write cycle responsive to a voltage on a write word line; a read access transistor coupled between a read word line and a read bit line, and active during a read cycle responsive to a voltage at the storage node; and a storage capacitor coupled between the read word line and the storage node. Methods for operating the memory cell are also disclosed.
摘要:
A method for performing a synchronized order change in a manufacturing process is provided. An order is associated with an order number and a work in process (WIP) number, which identifies a physical lot corresponding to the order. The synchronized order change maintains a relationship between the order number and the WIP number while making the change. This avoids the need to scrap lots that are no longer associated with an order number and prevents holds from being placed on incorrect lots.
摘要:
An embodiment is an integrated circuit (IC) structure. The structure comprises a deep n well in a substrate, a first pickup device in the deep n well, a first signal device in the deep n well, a dissipation device in the substrate, a second signal device in the substrate, a first electrical path between the first pickup device and the dissipation device, and a second electrical path between the first signal device and the second signal device. The dissipation device is outside of the deep n well, and the second signal device is outside of the deep n well. A highest point of the first electrical path is lower than a highest point of the second electrical path.
摘要:
The optoelectronic apparatus of the present invention includes a solar cell and a prism located over the solar cell. The light reflected by the solar cell is reflected back to the solar cell by the prism. Therefore, the light repeatedly illuminates the solar cell to improve the power transference rate.