Invention Grant
- Patent Title: Method for heating part in processing chamber of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus
- Patent Title (中): 半导体制造装置和半导体制造装置的处理室中的加热部件的方法
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Application No.: US13034858Application Date: 2011-02-25
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Publication No.: US08824875B2Publication Date: 2014-09-02
- Inventor: Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
- Applicant: Jun Yamawaku , Chishio Koshimizu , Tatsuo Matsudo
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2010-042036 20100226
- Main IPC: A21B2/00
- IPC: A21B2/00 ; F26B19/00

Abstract:
There is provided a method for heating a part within a processing chamber of a semiconductor manufacturing apparatus having a substrate in the processing chamber and performing a process on the substrate. The heating method includes generating heating lights which is generated by a heating light source provided outside the processing chamber and has a wavelength band capable of passing through a first part in the processing chamber and being absorbed into a second part in the processing chamber made of a material different from that of the first part, and heating the second part in the processing chamber by passing the heating lights through the first part in the processing chamber and irradiating the heating lights to the second part in the processing chamber.
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