发明授权
- 专利标题： Method for etching with controlled wiggling
- 专利标题（中）： 受控摆动蚀刻的方法
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申请号： US13625632申请日： 2012-09-24
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公开(公告)号： US08828744B2公开(公告)日： 2014-09-09
- 发明人: Joseph J. Vegh , Yungho Noh
- 申请人： Lam Research Corporation
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Beyer Law Group LLP
- 主分类号： H01L21/3065
- IPC分类号： H01L21/3065
摘要：
A method for etching trenches in an etch layer disposed below a patterned organic mask is provided. The patterned organic mask is treated, comprising flowing a treatment gas comprising H2 and N2, forming a plasma from the treatment gas, making patterned organic mask more resistant to wiggling, and stopping the flow of the treatment gas. Trenches are etched in the etch layer through the patterned organic mask.
公开/授权文献
- US20140087486A1 METHOD FOR ETCHING WITH CONTROLLED WIGGLING 公开/授权日：2014-03-27
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