Invention Grant
- Patent Title: Compensation for a charge in a silicon substrate
- Patent Title (中): 补偿硅衬底中的电荷
-
Application No.: US13676817Application Date: 2012-11-14
-
Publication No.: US08828746B2Publication Date: 2014-09-09
- Inventor: Alan B. Botula , Mark D. Jaffe , Alvin J. Joseph , Richard A. Phelps , James Slinkman , Randy L. Wolf
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Michael LeStrange
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A silicon device includes an active silicon layer, a buried oxide (BOX) layer beneath the active silicon layer and a high-resistivity silicon layer beneath the BOX layer. The device also includes a harmonic suppression layer at a boundary of the BOX layer and the high-resistivity silicon layer.
Public/Granted literature
- US20140131800A1 COMPENSATION FOR A CHARGE IN A SILICON SUBSTRATE Public/Granted day:2014-05-15
Information query
IPC分类:
