Invention Grant
- Patent Title: Backside illumination (BSI) CMOS image sensor process
- Patent Title (中): 背面照明（BSI）CMOS图像传感器工艺
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Application No.: US13665937Application Date: 2012-11-01
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Publication No.: US08828779B2Publication Date: 2014-09-09
- Inventor: Xin Zhao
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L27/146 ; H01L31/0232
Abstract:
A backside illumination (BSI) CMOS image sensing process includes the following steps. A substrate having an active side is provided. A curving process is performed to curve the active side. A reflective layer is formed on the active side, so that at least a curved mirror is formed on the active side.
Public/Granted literature
- US20140120653A1 BACKSIDE ILLUMINATION (BSI) CMOS IMAGE SENSOR PROCESS Public/Granted day:2014-05-01
Information query
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