发明授权
- 专利标题： Manufacturing method of semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US13368560申请日： 2012-02-08
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公开(公告)号： US08828805B2公开(公告)日： 2014-09-09
- 发明人: Masato Numazaki
- 申请人： Masato Numazaki
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Mattingly & Malur, PC
- 优先权： JP2011-056073 20110315
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L23/00 ; H01L21/56 ; H01L23/495 ; H01L23/31
摘要：
The formation of a void is suppressed in the assembly of a semiconductor device. An MCU chip and an AFE chip are mounted over a die pad formed of a quadrangle having a pair of first sides and a pair of second sides. After wire bonding is carried out on the MCU chip and the AFE chip, resin is supplied from the side of one second side of the two second sides to the side of the other second side. The resin is thereby passed through the opening between a first pad group and a second pad group over the MCU chip to fill the area between the chips and thus the formation of a void is suppressed in the area between the chips.
公开/授权文献
- US20120238056A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE 公开/授权日：2012-09-20
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