发明授权
US08829513B2 Oxide semiconductor including Ga, In, Zn, and O and A thin film transistor and a display with the oxide semiconductor including Ga, In, Zn, and O
有权
包括Ga，In，Zn和O和A薄膜晶体管的氧化物半导体和具有包括Ga，In，Zn和O的氧化物半导体的显示器
- 专利标题： Oxide semiconductor including Ga, In, Zn, and O and A thin film transistor and a display with the oxide semiconductor including Ga, In, Zn, and O
- 专利标题（中）： 包括Ga，In，Zn和O和A薄膜晶体管的氧化物半导体和具有包括Ga，In，Zn和O的氧化物半导体的显示器
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申请号： US13391638申请日： 2010-03-29
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公开(公告)号： US08829513B2公开(公告)日： 2014-09-09
- 发明人: Yoshifumi Ota , Hirohiko Nishiki , Yoshimasa Chikama , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Kazuo Nakagawa , Yuuji Mizuno , Michiko Takei , Yoshiyuki Harumoto
- 申请人： Yoshifumi Ota , Hirohiko Nishiki , Yoshimasa Chikama , Takeshi Hara , Tetsuya Aita , Masahiko Suzuki , Okifumi Nakagawa , Kazuo Nakagawa , Michiko Takei , Yoshiyuki Harumoto , Hinae Mizuno
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Keating & Bennett, LLP
- 优先权： JP2009-200341 20090831
- 国际申请： PCT/JP2010/055582 WO 20100329
- 国际公布： WO2011/024501 WO 20110303
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L29/786 ; H01L27/32 ; H01L33/00 ; G02F1/1368
摘要：
The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01≦Zn/(In+Zn)≦0.22.
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