发明授权
- 专利标题： Structure and layout of a FET prime cell
- 专利标题（中）： FET素电池的结构和布局
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申请号： US13398408申请日： 2012-02-16
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公开(公告)号： US08829572B2公开(公告)日： 2014-09-09
- 发明人: Basanth Jagannathan , John J. Pekarik , Christopher M. Schnabel
- 申请人： Basanth Jagannathan , John J. Pekarik , Christopher M. Schnabel
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Roberts Mlotkowski Safran & Cole, P.C.
- 代理商 Joseph Abate
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L27/088 ; H01L21/70 ; H01L23/552
摘要：
Method of making a semiconductor device that includes forming a source and a drain in a substrate, forming a gate on the substrate between the source and drain, forming a substrate contact in electrical contact with the source, and forming an electrical contact to the source, drain and gate, and the substrate.
公开/授权文献
- US20120146104A1 STRUCTURE AND LAYOUT OF A FET PRIME CELL 公开/授权日：2012-06-14
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