发明授权
- 专利标题： Flash memory device and manufacturing method of the same
- 专利标题（中）： 闪存器件及其制造方法相同
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申请号： US13003585申请日： 2010-09-19
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公开(公告)号： US08829587B2公开(公告)日： 2014-09-09
- 发明人: Huilong Zhu
- 申请人： Huilong Zhu
- 申请人地址： CN Beijing
- 专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人地址： CN Beijing
- 代理机构： Osha Liang LLP
- 优先权： CN201010162280 20100428
- 国际申请： PCT/CN2010/001434 WO 20100919
- 国际公布： WO2011/134127 WO 20111103
- 主分类号： H01L29/768
- IPC分类号： H01L29/768 ; H01L21/28 ; H01L29/423 ; H01L29/66 ; H01L29/788
摘要：
A flash memory device includes a semiconductor substrate, a gate stack formed on the semiconductor substrate; a channel region below the gate stack; spacers outside the gate stack; and source/drain regions outside the channel region and in the semiconductor substrate, in which the gate stack includes a first gate dielectric layer on the channel region; a first conductive layer covering an upper surface of the first gate dielectric layer and inner walls of the spacers; a second gate dielectric layer covering a surface of the first conductive layer; and a second conductive layer covering a surface of the second gate dielectric layer. A method for manufacturing a flash memory device disclosed herein.
公开/授权文献
- US20120018791A1 FLASH MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME 公开/授权日：2012-01-26
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