发明授权
US08829677B2 Semiconductor die having fine pitch electrical interconnects 有权
具有细间距电互连的半导体管芯

Semiconductor die having fine pitch electrical interconnects
摘要:
A die has interconnect pads on an interconnect side near an interconnect edge and has at least a portion of the interconnect side covered by a conformal dielectric coating, in which an interconnect trace over the dielectric coating forms a high interface angle with the surface of the dielectric coating. Because the traces have a high interface angle, a tendency for the interconnect materials to “bleed” laterally is mitigated and contact or overlap of adjacent traces is avoided. The interconnect trace includes a curable electrically conductive interconnect material; that is, it includes a material that can be applied in a flowable form, and thereafter cured or allowed to cure to form the conductive traces. Also, a method includes, prior to forming the traces, subjecting the surface of the conformal dielectric coating with a CF4 plasma treatment.
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