发明授权
- 专利标题： Magnetic memory
- 专利标题（中）： 磁记忆
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申请号： US13713482申请日： 2012-12-13
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公开(公告)号： US08830742B2公开(公告)日： 2014-09-09
- 发明人: Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
- 申请人： Tsuyoshi Kondo , Hirofumi Morise , Shiho Nakamura
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2012-049642 20120306
- 主分类号： G11C11/15
- IPC分类号： G11C11/15 ; G11C11/10 ; G11C11/02 ; G11C11/16 ; G11C11/06 ; G11C11/155
摘要：
A magnetic memory according to an embodiment includes: a magnetic structure extending in a first direction and having a circular ring-like shape in cross-section in a plane perpendicular to the first direction; a nonmagnetic layer formed on an outer surface of the magnetic structure, the outer surface extending in the first direction; and at least one reference portion formed on part of a surface of the nonmagnetic layer, the surface being on the opposite side from the magnetic structure, the at least one reference portion containing a magnetic material.
公开/授权文献
- US20130235653A1 MAGNETIC MEMORY 公开/授权日：2013-09-12
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