Invention Grant
- Patent Title: Interconnects and semiconductor devices including at least two portions of a metal nitride material and methods of fabrication
- Patent Title (中): 包括金属氮化物材料的至少两部分和制造方法的互连和半导体器件
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Application No.: US14043536Application Date: 2013-10-01
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Publication No.: US08835274B2Publication Date: 2014-09-16
- Inventor: Yongjun Jeff Hu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/92
- IPC: H01L29/92 ; H01L29/94 ; H01L21/74 ; H01L49/02 ; H01L27/108 ; H01L21/768
Abstract:
Metal-insulator-metal capacitors with a bottom electrode including at least two portions of a metal nitride material. At least one of the portions of the metal nitride material includes a different material than another portion. Interconnects including at least two portions of a metal nitride material are also disclosed, at least one of the portions of the metal nitride material are formed from a different material than another portion of the metal nitride material. Methods for fabricating such MIM capacitors and interconnects are also disclosed, as are semiconductor devices including such MIM capacitors and interconnects.
Public/Granted literature
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