发明授权
- 专利标题: Nonvolatile variable resistance element
- 专利标题(中): 非易失性可变电阻元件
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申请号: US13970169申请日: 2013-08-19
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公开(公告)号: US08835896B2公开(公告)日: 2014-09-16
- 发明人: Hidenori Miyagawa , Shosuke Fujii , Akira Takashima , Daisuke Matsushita
- 申请人: Kabushiki Kaisha Toshiba
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2011-032875 20110218
- 主分类号: H01L47/00
- IPC分类号: H01L47/00
摘要:
According to one embodiment, a nonvolatile variable resistance element includes a first electrode, a second electrode, a variable resistance layer, and a dielectric layer. The second electrode includes a metal element. The variable resistance layer is arranged between the first electrode and the second electrode. A resistance change is reversibly possible in the variable resistance layer according to move the metal element in and out. The dielectric layer is inserted between the second electrode and the variable resistance layer and has a diffusion coefficient of the metal element smaller than that of the variable resistance layer.
公开/授权文献
- US20130328009A1 NONVOLATILE VARIABLE RESISTANCE ELEMENT 公开/授权日:2013-12-12
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