发明授权
- 专利标题： Semiconductor device
- 专利标题（中）： 半导体器件
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申请号： US13608039申请日： 2012-09-10
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公开(公告)号： US08835918B2公开(公告)日： 2014-09-16
- 发明人: Shunpei Yamazaki , Atsuo Isobe , Toshinari Sasaki
- 申请人： Shunpei Yamazaki , Atsuo Isobe , Toshinari Sasaki
- 申请人地址： JP Atsugi-shi, Kanagawa-ken
- 专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址： JP Atsugi-shi, Kanagawa-ken
- 代理机构： Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权： JP2011-202963 20110916
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L27/12
摘要：
To provide a transistor which includes an oxide semiconductor and is capable of operating at high speed or a highly reliable semiconductor device including the transistor, a transistor in which an oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer, which is embedded in a base insulating layer and whose upper surface is at least partly exposed from the base insulating layer, and a wiring layer provided above the oxide semiconductor layer is electrically connected to the electrode layer or a part of a low-resistance region of the oxide semiconductor layer, which overlaps with the electrode layer.
公开/授权文献
- US20130069053A1 SEMICONDUCTOR DEVICE 公开/授权日：2013-03-21
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