Invention Grant
- Patent Title: Protection method for an electronic device and corresponding device
- Patent Title (中): 电子设备及相应设备的保护方法
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Application No.: US13616603Application Date: 2012-09-14
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Publication No.: US08835923B2Publication Date: 2014-09-16
- Inventor: Pascal Fornara
- Applicant: Pascal Fornara
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater & Matsil, L.L.P.
- Priority: FR1158451 20110922
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/66 ; H01L21/30 ; H01L21/31 ; H01L23/58
Abstract:
The semiconductor wafer for a silicon-on-insulator integrated circuit comprises an insulating region located between a first semiconductor substrate intended to receive the integrated circuit and a second semiconductor substrate containing at least one buried layer comprising at least one metal silicide.
Public/Granted literature
- US20130075726A1 PROTECTION METHOD FOR AN ELECTRONIC DEVICE AND CORRESPONDING DEVICE Public/Granted day:2013-03-28
Information query
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