发明授权
US08835977B2 TVS with low capacitance and forward voltage drop with depleted SCR as steering diode
有权
TVS具有低电容和正向压降，耗尽SCR作为转向二极管
- 专利标题： TVS with low capacitance and forward voltage drop with depleted SCR as steering diode
- 专利标题（中）： TVS具有低电容和正向压降，耗尽SCR作为转向二极管
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申请号： US13720140申请日： 2012-12-19
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公开(公告)号： US08835977B2公开(公告)日： 2014-09-16
- 发明人: Madhur Bobde , Lingpeng Guan , Anup Bhalla , Limin Weng
- 申请人： Madhur Bobde , Lingpeng Guan , Anup Bhalla , Limin Weng
- 申请人地址： US CA Sunnyvale
- 专利权人： Alpha and Omega Semiconductor Incorporated
- 当前专利权人： Alpha and Omega Semiconductor Incorporated
- 当前专利权人地址： US CA Sunnyvale
- 代理商 Bo-In Lin
- 主分类号： H01L29/866
- IPC分类号： H01L29/866 ; H01L27/04 ; H01L27/02 ; H01L27/08
摘要：
A transient-voltage suppressing (TVS) device disposed on a semiconductor substrate of a first conductivity type. The TVS includes a buried dopant region of a second conductivity type disposed and encompassed in an epitaxial layer of the first conductivity type wherein the buried dopant region extends laterally and has an extended bottom junction area interfacing with the underlying portion of the epitaxial layer thus constituting a Zener diode for the TVS device. The TVS device further includes a region above the buried dopant region further comprising a top dopant layer of a second conductivity type and a top contact region of a second conductivity type which act in combination with the epitaxial layer and the buried dopant region to form a plurality of interfacing PN junctions constituting a SCR acting as a steering diode to function with the Zener diode for suppressing a transient voltage.
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