发明授权
US08837222B2 Methods and apparatuses including a select transistor having a body region including monocrystalline semiconductor material and/or at least a portion of its gate located in a substrate
有权
包括具有包括单晶半导体材料的主体区域和/或其位于衬底中的栅极的至少一部分的选择晶体管的方法和装置
- 专利标题： Methods and apparatuses including a select transistor having a body region including monocrystalline semiconductor material and/or at least a portion of its gate located in a substrate
- 专利标题（中）： 包括具有包括单晶半导体材料的主体区域和/或其位于衬底中的栅极的至少一部分的选择晶体管的方法和装置
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申请号： US13282237申请日： 2011-10-26
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公开(公告)号： US08837222B2公开(公告)日： 2014-09-16
- 发明人: Toru Tanzawa
- 申请人： Toru Tanzawa
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman Lundberg & Woessner, P.A.
- 主分类号： G11C16/04
- IPC分类号： G11C16/04 ; H01L21/04 ; H01L27/115
摘要：
Some embodiments include apparatuses and methods having a memory cell string including memory cells located in different levels of the apparatuses and a select transistor coupled to the memory cell string. In at least one of such apparatuses, the select transistor can include a body region including a monocrystalline semiconductor material. Other embodiments including additional apparatuses and methods are described.
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