Invention Grant
US08839168B2 Self-aligned double patterning via enclosure design 有权
通过外壳设计进行自对准双图案化

Self-aligned double patterning via enclosure design
Abstract:
A design methodology for determining a via enclosure rule for use with a self-aligned double pattern (SADP) technique is disclosed. The shape of the block mask serves as a criterion for choosing a via enclosure rule. Different block mask shapes within an integrated circuit design may utilize different rules and provide different margins for via enclosure. A tight via enclosure design rule reduces the margin of a line beyond the via where possible, while a loose via enclosure design rule increases the margin of a line beyond the via where it is beneficial to do so.
Public/Granted literature
Information query
Patent Agency Ranking
0/0