Invention Grant
- Patent Title: Self-aligned double patterning via enclosure design
- Patent Title (中): 通过外壳设计进行自对准双图案化
-
Application No.: US13746508Application Date: 2013-01-22
-
Publication No.: US08839168B2Publication Date: 2014-09-16
- Inventor: Jongwook Kye , Harry J Levinson , Jason E Stephens , Lei Yuan
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Keohane & D'Alessandro, PLLC
- Agent Darrell L. Pogue
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A design methodology for determining a via enclosure rule for use with a self-aligned double pattern (SADP) technique is disclosed. The shape of the block mask serves as a criterion for choosing a via enclosure rule. Different block mask shapes within an integrated circuit design may utilize different rules and provide different margins for via enclosure. A tight via enclosure design rule reduces the margin of a line beyond the via where possible, while a loose via enclosure design rule increases the margin of a line beyond the via where it is beneficial to do so.
Public/Granted literature
- US20140208285A1 SELF-ALIGNED DOUBLE PATTERNING VIA ENCLOSURE DESIGN Public/Granted day:2014-07-24
Information query