Invention Grant
- Patent Title: Stress sensing devices and methods
- Patent Title (中): 应力传感装置和方法
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Application No.: US13556633Application Date: 2012-07-24
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Publication No.: US08839677B2Publication Date: 2014-09-23
- Inventor: Udo Ausserlechner , Mario Motz
- Applicant: Udo Ausserlechner , Mario Motz
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Patterson Thuente Pedersen, P.A.
- Main IPC: G01B7/16
- IPC: G01B7/16 ; G01L1/22

Abstract:
Embodiments relate to stress sensors and methods of sensing stress. In an embodiment, a stress sensor comprises a vertical resistor. The vertical resistor can comprise, for example, an n-type resistor and can have various operating modes. The various operating modes can depend on a coupling configuration of terminals of the resistor and can provide varying piezo-coefficients with very similar temperature coefficients of resistances. Comparisons of resistances and piezo-coefficients in differing operating modes can provide a measure of mechanical stresses acting on the device.
Public/Granted literature
- US20120285255A1 STRESS SENSING DEVICES AND METHODS Public/Granted day:2012-11-15
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