Invention Grant
US08841742B2 Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods 有权
使用供体结构的低温层转移方法与在转移层中的凹槽中的材料,使用这种方法制造的半导体结构

  • Patent Title: Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods
  • Patent Title (中): 使用供体结构的低温层转移方法与在转移层中的凹槽中的材料,使用这种方法制造的半导体结构
  • Application No.: US13777231
    Application Date: 2013-02-26
  • Publication No.: US08841742B2
    Publication Date: 2014-09-23
  • Inventor: Mariam SadakaIonut Radu
  • Applicant: Soitec
  • Applicant Address: FR Bernin
  • Assignee: Soitec
  • Current Assignee: Soitec
  • Current Assignee Address: FR Bernin
  • Agency: TraskBritt
  • Main IPC: H01L29/06
  • IPC: H01L29/06 H01L21/762
Low temperature layer transfer process using donor structure with material in recesses in transfer layer, semiconductor structures fabricated using such methods
Abstract:
Methods of transferring a layer of semiconductor material from a first donor structure to a second structure include forming recesses in the donor structure, implanting ions into the donor structure to form a generally planar, inhomogeneous weakened zone therein, and providing material within the recesses. The first donor structure may be bonded to a second structure, and the first donor structure may be fractured along the generally planar weakened zone, leaving the layer of semiconductor material bonded to the second structure. Semiconductor devices may be fabricated by forming active device structures on the transferred layer of semiconductor material. Semiconductor structures are fabricated using the described methods.
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