发明授权
US08841748B2 Semiconductor device comprising a capacitor and an electrical connection via and fabrication method 有权
包括电容器和电连接通孔及其制造方法的半导体器件

Semiconductor device comprising a capacitor and an electrical connection via and fabrication method
摘要:
A dielectric wafer has, on top of its front face, a front electrical connection including an electrical connection portion. A blind hole passes through from a rear face of the wafer to at least partially reveal a rear face of the electrical connection portion. A through capacitor is formed in the blind hole. The capacitor includes a first conductive layer covering the lateral wall and the electrical connection portion (forming an outer electrode), a dielectric intermediate layer covering the first conductive layer (forming a dielectric membrane), and a second conductive layer covering the dielectric intermediate layer (forming an inner electrode). A rear electrical connection is made to the inner electrode.
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