Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US14075513Application Date: 2013-11-08
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Publication No.: US08841771B2Publication Date: 2014-09-23
- Inventor: Masayuki Furumiya , Yasutaka Nakashiba , Akira Tanabe
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2009-235054 20091009
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/528 ; H01L23/522 ; H01L21/8238

Abstract:
A semiconductor device with a transistor region has a first conductor pattern formed within a multilayer interconnect structure positioned under a signal line and above the transistor region. The first conductor pattern is coupled to ground or a power supply and overlaps the transistor region. The signal line overlaps the first conductor pattern.
Public/Granted literature
- US20140061934A1 SEMICONDUCTOR DEVICE Public/Granted day:2014-03-06
Information query
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