Invention Grant
- Patent Title: Micromaterial strain measurement apparatus and method therefor
- Patent Title (中): 微材料应变测量装置及其方法
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Application No.: US13701402Application Date: 2011-06-01
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Publication No.: US08844367B2Publication Date: 2014-09-30
- Inventor: Kazuki Takashima , Masaaki Otsu , Mitsuhiro Matsuda , Hiroaki Kurahara , Hidetaka Maeda , Tadahiro Yonekura
- Applicant: Kazuki Takashima , Masaaki Otsu , Mitsuhiro Matsuda , Hiroaki Kurahara , Hidetaka Maeda , Tadahiro Yonekura
- Applicant Address: JP Kumamoto-shi, Kumamoto
- Assignee: Kumamoto University
- Current Assignee: Kumamoto University
- Current Assignee Address: JP Kumamoto-shi, Kumamoto
- Agency: Squire Patton Boggs (US) LLP
- Priority: JP2010-127109 20100602
- International Application: PCT/JP2011/062565 WO 20110601
- International Announcement: WO2011/152441 WO 20111208
- Main IPC: G01L1/24
- IPC: G01L1/24 ; G01N3/08 ; G01B11/16 ; G01N3/06

Abstract:
A measurement unit for tensile or compressive stress can includes a CCD camera for detecting an interference light, the interference light being formed with a measurement beam from a measured region and a reference beam from a reference mirror. A first objective lens can have the reference mirror. An image processing apparatus can measure the three-dimensional shape of the measured region from the position of the first objective lens at which the interference light provides the maximum contrast and can measure the distance between two gauge points on the basis of the three-dimensional shape. When strain is generated on a micromaterial, the strain against the measured tensile stress is measured on the basis of the tensile stress and the distance between the two gauge points.
Public/Granted literature
- US20130068034A1 MICROMATERIAL STRAIN MEASUREMENT APPARATUS AND METHOD THEREFOR TECHINICAL FIELD Public/Granted day:2013-03-21
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