发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13578598申请日： 2011-11-30
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公开(公告)号： US08846488B2公开(公告)日： 2014-09-30
- 发明人: Qingqing Liang , Huaxiang Yin , Huicai Zhong , Huilong Zhu
- 申请人： Qingqing Liang , Huaxiang Yin , Huicai Zhong , Huilong Zhu
- 申请人地址： CN Beijing
- 专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人： Institute of Microelectronics, Chinese Academy of Sciences
- 当前专利权人地址： CN Beijing
- 代理机构： Martine Penilla Group, LLP
- 优先权： CN201110311343 20111014
- 国际申请： PCT/CN2011/001999 WO 20111130
- 国际公布： WO2013/053084 WO 20130418
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L29/78 ; H01L21/762 ; H01L21/265
摘要：
The invention relates to a semiconductor device and a method for manufacturing such a semiconductor device. A semiconductor device according to an embodiment of the invention may comprise: a substrate; a device region located on the substrate; and at least one stress introduction region separated from the device region by an isolation structure, with stress introduced into at least a portion of the at least one stress introduction region, wherein the stress introduced into the at least a portion of the at least one stress introduction region is produced by utilizing laser to illuminate an amorphized portion comprised in the at least one stress introduction region to recrystallize the amorphized portion. The semiconductor device according to an embodiment of the invention produces stress in a simpler manner and thereby improves the performance of the device.