发明授权
- 专利标题: III-nitride transistor stacked with FET in a package
- 专利标题(中): 在封装中堆叠有FET的III族氮化物晶体管
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申请号: US13053556申请日: 2011-03-22
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公开(公告)号: US08847408B2公开(公告)日: 2014-09-30
- 发明人: Heny Lin , Jason Zhang , Alberto Guerra
- 申请人: Heny Lin , Jason Zhang , Alberto Guerra
- 申请人地址: US CA El Segundo
- 专利权人: International Rectifier Corporation
- 当前专利权人: International Rectifier Corporation
- 当前专利权人地址: US CA El Segundo
- 代理机构: Farjami & Farjami LLP
- 主分类号: H01L25/18
- IPC分类号: H01L25/18 ; H01L23/495 ; H01L23/00 ; H01L29/20 ; H01L29/778
摘要:
One exemplary disclosed embodiment comprises a three-terminal stacked-die package including a field effect transistor (FET), such as a silicon FET, stacked atop a III-nitride transistor, such that a drain of the FET resides on and is electrically coupled to a source of the III-nitride transistor. A first terminal of the package is coupled to a gate of the FET, a second terminal of the package is coupled to a drain of the III-nitride transistor. A third terminal of the package is coupled to a source of the FET. In this manner, devices such as cascoded switches may be packaged in a stacked-die form, resulting in reduced parasitic inductance and resistance, improved thermal dissipation, smaller form factor, and lower manufacturing cost compared to conventional packages.
公开/授权文献
- US20120223321A1 III-Nitride Transistor Stacked with FET in a Package 公开/授权日:2012-09-06