公开(公告)号：US09000746B2

公开(公告)日：2015-04-07

申请号：US13298694

申请日：2011-11-17

申请人： Michael A. Briere ,  Jason Zhang ,  HamidTony Bahramian

发明人： Michael A. Briere ,  Jason Zhang ,  HamidTony Bahramian

IPC分类号： H02M3/156 ,  H02M3/158 ,  H02M7/538 ,  H03K17/687

CPC分类号： H03K3/012 ,  H02M3/1588 ,  H02M7/538 ,  H03K17/6871 ,  H03K2217/0036 ,  Y02B70/1466

摘要： A power converter driver that is supplied with two different voltages.

摘要翻译： 电源转换器驱动器，提供两种不同的电压。

公开(公告)号：US08834376B2

公开(公告)日：2014-09-16

申请号：US13407378

申请日：2012-02-28

申请人： Stergios Stergiopoulos ,  Andreas Freibert ,  Jason Zhang

发明人： Stergios Stergiopoulos ,  Andreas Freibert ,  Jason Zhang

IPC分类号： A61B8/00 ,  A61B8/08 ,  A61B5/00

CPC分类号： A61B8/0808 ,  A61B5/4064 ,  A61B8/0858 ,  G01N2291/048

摘要： Described herein is the use of ultrasound pulses at different frequencies to track the dispersion properties of intracranial tissues which may have been altered due to traumatic or other neurological brain injury. Dispersive ultrasound does not provide imaging, but it can provide data of significant diagnostic value by using decision support systems that can be trained as a medical diagnostic system for traumatic brain injuries applications to detect specific patterns of dispersion that are associated with specific intracranial injuries.

摘要翻译： 这里描述的是使用不同频率的超声波脉冲跟踪可能由于创伤性或其他神经性脑损伤而改变的颅内组织的分散性质。 分散超声不提供成像，但它可以通过使用可被训练为创伤性脑损伤应用的医学诊断系统的检测支持系统来提供具有显着诊断价值的数据，以检测与特定颅内损伤相关的特定分散模式。

公开(公告)号：US08450014B2

公开(公告)日：2013-05-28

申请号：US12901526

申请日：2010-10-09

申请人： Jun Liu ,  Daiwon Choi ,  Zhenguo Yang ,  Donghai Wang ,  Gordon L Graff ,  Zimin Nie ,  Vilayanur V Viswanathan ,  Jason Zhang ,  Wu Xu ,  Jin Yong Kim

发明人： Jun Liu ,  Daiwon Choi ,  Zhenguo Yang ,  Donghai Wang ,  Gordon L Graff ,  Zimin Nie ,  Vilayanur V Viswanathan ,  Jason Zhang ,  Wu Xu ,  Jin Yong Kim

IPC分类号： H01M4/13 ,  H01M4/58 ,  H01M6/00 ,  H01M10/00 ,  H01M4/02 ,  H01G4/28 ,  C01B31/04 ,  C01B31/00 ,  B23P17/04 ,  H01S4/00

CPC分类号： B82Y30/00 ,  H01M4/131 ,  H01M4/364 ,  H01M4/485 ,  H01M4/5825 ,  H01M4/625 ,  H01M10/0525 ,  H01M2004/021 ,  H01M2010/4292 ,  Y02T10/7011 ,  Y10T29/49 ,  Y10T29/49002

摘要： Lithium ion batteries having an anode comprising at least one graphene layer in electrical communication with titania to form a nanocomposite material, a cathode comprising a lithium olivine structure, and an electrolyte. The graphene layer has a carbon to oxygen ratio of between 15 to 1 and 500 to 1 and a surface area of between 400 and 2630 m2/g. The nanocomposite material has a specific capacity at least twice that of a titania material without graphene material at a charge/discharge rate greater than about 10 C. The olivine structure of the cathode of the lithium ion battery of the present invention is LiMPO4 where M is selected from the group consisting of Fe, Mn, Co, Ni and combinations thereof.

摘要翻译： 具有阳极的锂离子电池包括与二氧化钛电连通以形成纳米复合材料的至少一个石墨烯层，包含锂橄榄石结构的阴极和电解质。 石墨烯层的碳与氧比为15:1至500:1，表面积为400至2630m2 / g。 该纳米复合材料的比容量至少为不含石墨烯材料的二氧化钛材料的两倍，充电/放电速率大于约10℃。本发明的锂离子电池的阴极的橄榄石结构为LiMPO4，其中M为 选自Fe，Mn，Co，Ni及其组合。

公开(公告)号：US08072202B2

公开(公告)日：2011-12-06

申请号：US12925199

申请日：2010-10-15

申请人： Bo Yang ,  Jason Zhang ,  Michael A. Briere

发明人： Bo Yang ,  Jason Zhang ,  Michael A. Briere

IPC分类号： G05F1/40

CPC分类号： H02M3/1588 ,  H02J7/0018 ,  H02J7/345 ,  Y02B40/90 ,  Y02B70/1466 ,  Y10T307/747

摘要： A circuit comprising a gate driver including first and second switching stages for driving respective sync and control switches, at least one of which is a normally ON depletion mode device, and another circuit connected to the first and second switching stages and including first and second circuits. The first circuit is coupled to the first switching stage and to the sync switch, the first switching stage having a first state wherein the sync switch is on, and a second state wherein a first bias voltage is switched to the gate of the sync switch to turn it off. The second circuit has a first state wherein the control switch is on when the sync switch is off, and a second state wherein the control switch is switched off when the sync switch is on by switching a second bias voltage to the gate of the control switch.

摘要翻译： 一种包括栅极驱动器的电路，包括用于驱动相应的同步和控制开关的第一和第二开关级，其中至少一个是正常耗尽型器件，以及连接到第一和第二开关级的另一个电路，包括第一和第二电路 。 第一电路耦合到第一开关级和同步开关，第一开关级具有第一状态，其中同步开关导通，以及第二状态，其中第一偏置电压切换到同步开关的栅极至 把它关掉。 第二电路具有第一状态，其中当同步开关断开时控制开关接通;以及第二状态，其中当同步开关接通时，通过将第二偏置电压切换到控制开关的门，控制开关断开 。

公开(公告)号：US20110284862A1

公开(公告)日：2011-11-24

申请号：US12800902

申请日：2010-05-24

申请人： Jason Zhang

发明人： Jason Zhang

IPC分类号： H01L27/06 ,  H01L29/778 ,  H01L29/20

CPC分类号： H01L27/0255 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/085 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/7787 ,  H01L29/872 ,  H03K17/687

摘要： Some exemplary embodiments of a III-nitride switching device with an emulated diode have been disclosed. One exemplary embodiment comprises a GaN switching device fabricated on a substrate comprising a high threshold GaN transistor coupled across a low threshold GaN transistor, wherein a gate and a source of the low threshold GaN transistor are shorted with an interconnect metal to function as a parallel diode in a reverse mode. The high threshold GaN transistor is configured to provide noise immunity for the GaN switching device when in a forward mode. The high threshold GaN transistor and the low threshold GaN transistor are typically fabricated on the same substrate, and with significantly different thresholds. As a result, the superior switching characteristics of III-nitride devices may be leveraged while retaining the functionality and the monolithic structure of the inherent body diode in traditional silicon FETs.

摘要翻译： 已经公开了具有仿真二极管的III族氮化物开关器件的一些示例性实施例。 一个示例性实施例包括制造在包括跨越低阈值GaN晶体管的高阈值GaN晶体管的衬底上的GaN开关器件，其中低阈值GaN晶体管的栅极和源极与互连金属短路以用作并联二极管 在反向模式。 高阈值GaN晶体管被配置为当处于正向模式时为GaN开关器件提供抗噪声能力。 高阈值GaN晶体管和低阈值GaN晶体管通常制造在相同的衬底上，具有明显不同的阈值。 结果，可以利用III族氮化物器件的优异的开关特性，同时保持传统硅FET中固有体二极管的功能和单片结构。

公开(公告)号：US20080122418A1

公开(公告)日：2008-05-29

申请号：US11986848

申请日：2007-11-27

申请人： Michael A. Briere ,  Jason Zhang ,  Bo Yang

发明人： Michael A. Briere ,  Jason Zhang ,  Bo Yang

IPC分类号： G05F1/46

CPC分类号： H02M3/1588 ,  Y02B70/1466

摘要： A buck converter circuit is disclosed in which one or both of the control switch and the synchronous switch are III-nitride-based depletion mode. An enhancement mode switch is connected with one or both of the III-nitride based switches and operated to prevent conduction of current by the III-nitride based switch until all biases are established for proper operation.

摘要翻译： 公开了一种降压转换器电路，其中控制开关和同步开关中的一个或两个是基于III族氮化物的耗尽模式。 增强模式开关与III族氮化物基开关中的一种或两者连接，并且被操作以防止由III族氮化物基开关导通电流，直到建立所有偏压才能正常工作。

公开(公告)号：US20060212138A1

公开(公告)日：2006-09-21

申请号：US11389573

申请日：2006-03-17

申请人： Jason Zhang

发明人： Jason Zhang

IPC分类号： G05B11/01

CPC分类号： G05B19/0423 ,  G05B2219/21005 ,  H02M3/157 ,  H02M3/1584

摘要： A power control system and method including a plurality of point-of-load regulators (POL) providing corresponding regulated output voltages; a manager for communicating control signals and operational parameters with said point-of load regulators; a digital bus to carry control signals therebetween; and an analog bus to carry operational parameters therebetween. Analog sensing circuits and a mutliplexer on the POL communicate operational parameters to and from the manager via the analog bus and are controlled via the digital bus. The operational parameters include output voltage, output current, over voltage, temperature, amplifier or comparator offset, and amplifier gain. The analog sensing circuits are calibrated by trim registers on the POL under digital control by the manager.

摘要翻译： 一种功率控制系统和方法，包括提供对应的调节输出电压的多个负载点调节器（POL）; 用于与所述负载点调节器通信控制信号和操作参数的管理器; 数字总线，用于在其间传送控制信号; 和一个模拟总线，用于在其间承载操作参数。 模拟感测电路和POL上的多路复用器通过模拟总线向管理者传送和从管理器传送操作参数，并通过数字总线进行控制。 操作参数包括输出电压，输出电流，过电压，温度，放大器或比较器偏移以及放大器增益。 模拟感测电路由经理在数字控制下POL上的微调寄存器进行校准。

公开(公告)号：US07098637B2

公开(公告)日：2006-08-29

申请号：US10843165

申请日：2004-05-10

申请人： David Jauregui ,  Jason Zhang

发明人： David Jauregui ,  Jason Zhang

IPC分类号： G05F1/40 ,  H02M7/10

CPC分类号： H02M1/088 ,  G11C5/147 ,  H02M3/156

摘要： An improved active voltage positioning (AVP) implementation for a power supply for a microprocessor or the like includes an AVP circuit which is separated from the power supply error amplifier by a buffer amplifier having a parallel RC feedback circuit to controllably adjust the transient response. An AVP signal derived from an output load current sensing element provides an input to the buffer amplifier. A second input is provided by power supply reference voltage. A output of the buffer amplifier is connected as an input to the error amplifier to provide the AVP window. This permits separate adjustment of the transient behavior of the error loop and the AVP loop.

摘要翻译： 用于微处理器等的电源的改进的有源电压定位（AVP）实现包括AVP电路，其通过具有并联RC反馈电路的缓冲放大器与电源误差放大器分离，以可控地调节瞬态响应。 从输出负载电流检测元件得到的AVP信号向缓冲放大器提供输入。 第二个输入由电源参考电压提供。 缓冲放大器的输出作为输入连接到误差放大器以提供AVP窗口。 这允许单独调整错误循环和AVP循环的瞬态行为。

公开(公告)号：US20060175158A1

公开(公告)日：2006-08-10

申请号：US11040717

申请日：2005-01-24

申请人： Ming (Jason) Zhang

发明人： Ming (Jason) Zhang

IPC分类号： F16D65/827

CPC分类号： F16D49/00 ,  B61H1/00 ,  F16D65/062

摘要： The present invention provides novel railway wheel configurations with integrated brake drum dedicated to vehicle frictional braking, along with manufacturing method of the novel wheel and modification schemes for existing railway vehicle components. The novel wheel configurations with integrated brake drum enables increased thermal tolerances to brake shoe thermal input, enhanced resistances to varies thermal damages and reduced hot axial deflection.

摘要翻译： 本发明提供了具有专用于车辆摩擦制动的集成制动鼓的新型铁路车轮结构，以及新型车轮的制造方法和现有铁路车辆部件的修改方案。 具有集成制动鼓的新型车轮配置可提高制动靴热输入的热容差，增强电阻以改变热损伤并减少热轴向偏转。

公开(公告)号：US20060071337A1

公开(公告)日：2006-04-06

申请号：US10950691

申请日：2004-09-28

申请人： Song-Hua Shi ,  Tian-An Chen ,  Jason Zhang ,  Katrina Certeza

发明人： Song-Hua Shi ,  Tian-An Chen ,  Jason Zhang ,  Katrina Certeza

IPC分类号： H01L23/48

CPC分类号： C08K3/36 ,  C08K9/04 ,  H01L21/563 ,  H01L23/295 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/051 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/13111 ,  H01L2224/16238 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/01067 ,  H01L2924/01078 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1433 ,  H01L2924/1461 ,  H01L2224/16225 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2224/05541 ,  H01L2224/05005 ,  H01L2924/00014

摘要： An electronic structure includes an electronic device coupled to a substrate by conductive bumps and ball limiting metallurgy (BLM). Underfill material having filler particles is disposed in a space between the electronic device and the substrate. A weight percentage of the filler particles is at least about 60%. A particle size of at least 90 wt % of the filler particles is less than about 2 μm and/or the filler particles are coated by an organic coupling agent. Once the underfill material is fully cured, its coefficient of thermal expansion is no more than 30 PPM/° C., and its glass transition temperature is at least 100° C., and its adhesion to a passivation layer of the electronic device, to the substrate and to the electronic device at its edges is such that the electronic structure passes standardized reliability tests without delamination of the ball limiting metallurgy.

摘要翻译： 电子结构包括通过导电凸块和球限制冶金（BLM）耦合到衬底的电子器件。 具有填料颗粒的底部填充材料设置在电子器件和基板之间的空间中。 填料颗粒的重量百分比为至少约60％。 填料颗粒的至少90重量％的粒径小于约2μm，和/或填料颗粒被有机偶联剂包覆。 一旦底部填充材料完全固化，其热膨胀系数不超过30PPM /℃，其玻璃化转变温度至少为100℃，并且其与电子器件的钝化层的粘合力， 基板和其边缘处的电子设备使得电子结构通过标准化的可靠性测试，而不会限制极限冶金的分层。