Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13892438Application Date: 2013-05-13
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Publication No.: US08847483B2Publication Date: 2014-09-30
- Inventor: Hideaki Kuwabara , Hideto Ohnuma
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2005-302315 20051017
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L27/32 ; H01L33/36 ; H01L51/00

Abstract:
As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.
Public/Granted literature
- US20130248920A1 Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2013-09-26
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