Invention Grant
- Patent Title: Semiconductor light emitting device and method of manufacturing the same
- Patent Title (中): 半导体发光器件及其制造方法
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Application No.: US13769132Application Date: 2013-02-15
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Publication No.: US08852972B2Publication Date: 2014-10-07
- Inventor: Jong Rak Sohn , Dong Kyun Yim , Seul Gee Lee , Chul Soo Yoon
- Applicant: Samsung Electronics CO., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2012-0016455 20120217
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/50
Abstract:
A method of manufacturing a semiconductor light emitting device, includes forming a conductive film on a surface of a semiconductor light emitting element. Phosphor particles are charged by mixing phosphor particles with an electrolyte having a metallic salt dissolved therein. The semiconductor light emitting element having the conductive film formed thereon is immersed in the electrolyte having the charged phosphor particles. A phosphor layer on the conductive film is formed by electrophoresing the phosphor particles. The conductive film is removed using wet etching.
Public/Granted literature
- US20130214312A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2013-08-22
Information query
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