A gate stack is formed on a silicon layer that is above a buried oxide layer. The gate stack comprises a high-k oxide layer on the silicon layer and a metal gate on the high-k oxide layer. A first nitride layer is formed on the silicon layer and the gate stack. An oxide layer is formed on the first nitride layer. A second nitride layer is formed on the oxide layer. The first nitride layer and the oxide layer are etched so as to form a nitride liner and an oxide liner adjacent to the gate stack. The second nitride layer is etched so as to form a first nitride spacer adjacent to the oxide liner. A faceted raised source/drain region is epitaxially formed adjacent to the nitride liner, the oxide liner, and first nitride spacer. Ions are implanted into the faceted raised source/drain region using the first nitride spacer.