Invention Grant
- Patent Title: Test structure for determination of TSV depth
- Patent Title (中): 用于测定TSV深度的测试结构
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Application No.: US13423823Application Date: 2012-03-19
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Publication No.: US08853693B2Publication Date: 2014-10-07
- Inventor: Hanyi Ding , Kai D. Feng , Ping-Chuan Wang , Zhijian Yang
- Applicant: Hanyi Ding , Kai D. Feng , Ping-Chuan Wang , Zhijian Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent William Steinberg
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768 ; H01L21/66
Abstract:
A test structure for a through-silicon-via (TSV) in a semiconductor chip includes a first contact, the first contact being electrically connected to a first TSV; and a second contact, wherein the first contact, second contact, and the first TSV form a first channel, and a depth of the first TSV is determined based on a resistance of the first channel.
Public/Granted literature
- US20120175612A1 TEST STRUCTURE FOR DETERMINATION OF TSV DEPTH Public/Granted day:2012-07-12
Information query
IPC分类:
