发明授权
- 专利标题： Integrated circuit with electrostatically coupled MOS transistors and method for producing such an integrated circuit
- 专利标题（中）： 具有静电耦合MOS晶体管的集成电路及其制造方法
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申请号： US12868488申请日： 2010-08-25
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公开(公告)号： US08853785B2公开(公告)日： 2014-10-07
- 发明人: Emmanuel Augendre , Maud Vinet , Laurent Clavelier , Perrine Batude
- 申请人： Emmanuel Augendre , Maud Vinet , Laurent Clavelier , Perrine Batude
- 申请人地址： FR Paris
- 专利权人： Commissariat a l'Energie Atomique et aux Energies Alternatives
- 当前专利权人： Commissariat a l'Energie Atomique et aux Energies Alternatives
- 当前专利权人地址： FR Paris
- 代理机构： Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权： FR0956081 20090907
- 主分类号： H01L27/088
- IPC分类号： H01L27/088
摘要：
An integrated circuit including at least: a first MOS transistor; a second MOS transistor, arranged on the first MOS transistor, the second MOS transistor including a channel region in at least one semiconductor layer including two approximately parallel primary faces; a portion of at least one electrically conductive material electrically connected to a gate of the first transistor and arranged between the gate of the first transistor and the channel region of the second transistor; a dielectric layer arranged at least between the portion of the electrically conductive material and the channel region of the second transistor; and a section of the channel region of the second transistor in a plane parallel to the two primary faces of the semiconductor layer is included in a section of the portion of the electrically conductive material projected in said plane.
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