发明授权
- 专利标题： ESD protection apparatus
- 专利标题（中）： ESD保护装置
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申请号： US13246672申请日： 2011-09-27
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公开(公告)号： US08853825B2公开(公告)日： 2014-10-07
- 发明人: Jam-Wem Lee , Yi-Feng Chang
- 申请人： Jam-Wem Lee , Yi-Feng Chang
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater and Matsil, L.L.P.
- 主分类号： H01L27/082
- IPC分类号： H01L27/082 ; H01L29/732 ; H01L27/02 ; H01L29/06
摘要：
An ESD protection apparatus comprises a substrate, a low voltage p-type well and a low voltage n-type well formed on the substrate. The ESD protection device further comprises a first P+ region formed on the low voltage p-type well and a second P+ region formed on the low voltage n-type well. The first P+ region and the second P+ region are separated by a first isolation region. The breakdown voltage of the ESD protection apparatus is tunable by adjusting the length of the first isolation region.
公开/授权文献
- US20130075863A1 ESD Protection Apparatus 公开/授权日：2013-03-28
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