发明授权
- 专利标题： Bump structures
- 专利标题（中）： 凹凸结构
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申请号： US13192302申请日： 2011-07-27
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公开(公告)号： US08853853B2公开(公告)日： 2014-10-07
- 发明人: Chih-Horng Chang , Tin-Hao Kuo , Chen-Shien Chen , Yen-Liang Lin
- 申请人： Chih-Horng Chang , Tin-Hao Kuo , Chen-Shien Chen , Yen-Liang Lin
- 申请人地址： TW
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW
- 代理机构： Lowe Hauptman & Ham, LLP
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
The embodiments of bump and bump-on-trace (BOT) structures provide bumps with recess regions for reflowed solder to fill. The recess regions are placed in areas of the bumps where reflow solder is most likely to protrude. The recess regions reduce the risk of bump to trace shorting. As a result, yield can be improved.
公开/授权文献
- US20130026619A1 BUMP STRUCTURES 公开/授权日：2013-01-31
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