发明授权
- 专利标题: Non-volatile memory and method with peak current control
- 专利标题(中): 具有峰值电流控制的非易失性存储器和方法
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申请号: US13559377申请日: 2012-07-26
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公开(公告)号: US08854900B2公开(公告)日: 2014-10-07
- 发明人: Dana Lee , Yi-Chieh Chen , Farookh Moogat
- 申请人: Dana Lee , Yi-Chieh Chen , Farookh Moogat
- 申请人地址: US TX Plano
- 专利权人: SanDisk Technologies, Inc.
- 当前专利权人: SanDisk Technologies, Inc.
- 当前专利权人地址: US TX Plano
- 代理机构: Davis Wright Tremaine LLP
- 主分类号: G11C7/00
- IPC分类号: G11C7/00
摘要:
A non-volatile memory with multiple memory dice manages simultaneous operations so as to not exceed a system power capacity. A load signal bus is pulled up with a strength proportional to the system power capacity. Each die has a driver to pull down the bus by an amount corresponding to its degree of power need as estimated by a state machine of the die. The bus therefore provides a load signal that serves as arbitration between the system power capacity and the cumulative loads of the individual dice. The load signal is therefore at a high state when the system power capacity is not exceeded; otherwise it is at a low state. When a die wishes to perform an operation and requests a certain amount of power, it drives the bus accordingly and its state machine either proceeds with the operation or not, depending on the load signal.
公开/授权文献
- US20140029357A1 Non-Volatile Memory and Method with Peak Current Control 公开/授权日:2014-01-30
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