Invention Grant
- Patent Title: Sealed shallow trench isolation region
- Patent Title (中): 密封浅沟槽隔离区
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Application No.: US13548237Application Date: 2012-07-13
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Publication No.: US08859388B2Publication Date: 2014-10-14
- Inventor: Michael V. Aquilino , Xiang Hu , Daniel J. Jaeger , Byeong Y. Kim , Yong M. Lee , Ying Li , Reinaldo A. Vega
- Applicant: Michael V. Aquilino , Xiang Hu , Daniel J. Jaeger , Byeong Y. Kim , Yong M. Lee , Ying Li , Reinaldo A. Vega
- Applicant Address: US NY Armonk KY
- Assignee: International Business Machines Corporation,GLOBALFOUNDRIES Inc.
- Current Assignee: International Business Machines Corporation,GLOBALFOUNDRIES Inc.
- Current Assignee Address: US NY Armonk KY
- Agency: Cantor Colburn LLP
- Agent Yuanmin Cai
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/66 ; H01L21/8234
Abstract:
A method for formation of a sealed shallow trench isolation (STI) region for a semiconductor device includes forming a STI region in a substrate, the STI region comprising a STI fill; forming a sealing recess in the STI fill of the STI region; and forming a sealing layer in the sealing recess over the STI fill.
Public/Granted literature
- US20140015092A1 SEALED SHALLOW TRENCH ISOLATION REGION Public/Granted day:2014-01-16
Information query
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