发明授权
- 专利标题： Active matrix substrate
- 专利标题（中）： 有源矩阵基板
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申请号： US12531383申请日： 2008-02-29
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公开(公告)号： US08860033B2公开(公告)日： 2014-10-14
- 发明人: Makoto Kita , Mutsumi Nakajima , Yoshimizu Moriya , Yasuyoshi Kaise
- 申请人： Makoto Kita , Mutsumi Nakajima , Yoshimizu Moriya , Yasuyoshi Kaise
- 申请人地址： JP Osaka
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka
- 代理机构： Nixon & Vanderhye P.C.
- 优先权： JP2007-069140 20070316
- 国际申请： PCT/JP2008/053689 WO 20080229
- 国际公布： WO2008/114598 WO 20080925
- 主分类号： H01L29/04
- IPC分类号： H01L29/04 ; G02F1/1368 ; H01L27/12 ; H01L29/786 ; G02F1/1362
摘要：
The active-matrix substrate (100) of the present invention satisfies d2>d1 and d2+A1/2>d3+L1/2, where d1 is the length of the shortest line segment that connects together a channel region (134) and a gettering region (112) as measured by projecting the line segment onto a line that connects together the channel region (134) of a TFT (130) and a source contact portion, d2 is the distance from the channel region (134) to the source contact portion (132c), d3 is the distance from the channel region (134) to a first end portion (110a), L1 is the length of the first end portion (110a), and A1 is the length of the source contact portion (132c).
公开/授权文献
- US20100096639A1 ACTIVE MATRIX SUBSTRATE 公开/授权日：2010-04-22
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