发明授权
- 专利标题： Semiconductor storage device and method of throttling performance of the same
- 专利标题（中）： 半导体存储装置及其节流方法的性能相同
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申请号： US13166131申请日： 2011-06-22
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公开(公告)号： US08862806B2公开(公告)日： 2014-10-14
- 发明人: Han Bin Yoon , Yeong-Jae Woo , Dong Gi Lee , Young Kug Moon , Hyuck-Sun Kwon
- 申请人： Han Bin Yoon , Yeong-Jae Woo , Dong Gi Lee , Young Kug Moon , Hyuck-Sun Kwon
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd
- 当前专利权人： Samsung Electronics Co., Ltd
- 当前专利权人地址： KR Suwon-si
- 代理机构： Stanzione & Kim, LLP
- 优先权： KR10-2010-0080697 20100820; KR10-2010-0080698 20100820; KR10-2010-0080699 20100820
- 主分类号： G06F12/00
- IPC分类号： G06F12/00 ; G06F3/06
摘要：
A semiconductor storage device and a method of throttling performance of the same are provided. The semiconductor storage device includes a non-volatile memory device configured to store data in a non-volatile state, and a controller configured to control the non-volatile memory device. The controller calculates a new performance level, compares the calculated performance level with a predetermined reference, and determines the calculated performance level as an updated performance level according to the comparison result.
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