发明授权
US08865513B2 High-density P-doped quantum dot solar cell obtained by the active doping of InP and a production method therefor
有权
通过InP的有源掺杂获得的高密度P掺杂量子点太阳能电池及其制备方法
- 专利标题： High-density P-doped quantum dot solar cell obtained by the active doping of InP and a production method therefor
- 专利标题（中）： 通过InP的有源掺杂获得的高密度P掺杂量子点太阳能电池及其制备方法
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申请号： US13806313申请日： 2010-07-02
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公开(公告)号： US08865513B2公开(公告)日： 2014-10-21
- 发明人: Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
- 申请人： Kyung Joong Kim , Seung Hui Hong , Jae Hee Park , Woo Lee
- 申请人地址： KR
- 专利权人： Korea Research Institute of Standards and Science
- 当前专利权人： Korea Research Institute of Standards and Science
- 当前专利权人地址： KR
- 代理机构： Cantor Colburn LLP
- 优先权： KR10-2010-0060404 20100625
- 国际申请： PCT/KR2010/004307 WO 20100702
- 国际公布： WO2011/162433 WO 20111229
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L31/18 ; H01L31/0304 ; H01L31/0352 ; H01L31/06
摘要：
Provided is a manufacturing method of a semiconductor quantum dot-sensitized solar cell. More particularly, the manufacturing method according to the present invention includes: a quantum dot forming step of forming a semiconductor layer containing a group 4 element and InP on a substrate and then performing heat-treatment on the substrate including the semiconductor layer formed thereon to remove indium (In) therefrom, thereby forming an n-type semiconductor quantum dot, which is a group 4 element quantum dot doped with phosphorus (P).
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