Semiconductor component with a window opening as an interface for ambient coupling

Invention Grant

US08865553B2 Semiconductor component with a window opening as an interface for ambient coupling 有权

Title translation: 具有窗口开口作为环境耦合接口的半导体部件

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Patent Title: Semiconductor component with a window opening as an interface for ambient coupling
Patent Title (中): 具有窗口开口作为环境耦合接口的半导体部件
Application No.: US13499446

Application Date: 2009-09-30
Publication No.: US08865553B2

Publication Date: 2014-10-21
Inventor: Wolfgang Einbrodt , Daniel Gaebler
Applicant: Wolfgang Einbrodt , Daniel Gaebler
Applicant Address: DE Erfurt
Assignee: X-Fab Semiconductor Foundries AG
Current Assignee: X-Fab Semiconductor Foundries AG
Current Assignee Address: DE Erfurt
Agency: Hunton & Williams LLP
International Application: PCT/IB2009/054280 WO 20090930
International Announcement: WO2011/039568 WO 20110407
Main IPC: H01L21/3213
IPC: H01L21/3213 ; H01L27/146 ; H01L21/8234

Semiconductor component with a window opening as an interface for ambient coupling

Abstract:

A window opening in a semiconductor component is produced on the basis of a gate structure which serves as an efficient etch resist layer in order to reliably etch an insulation layer stack without exposing the photosensitive semiconductor area. The polysilicon in the gate structure is then removed on the basis of an established gate etching process, with the gate insulation layer preserving the integrity of the photosensitive semiconductor material.

Abstract(Chinese):

基于用作有效的抗蚀剂层的栅极结构来制造半导体部件中的窗口，以便可靠地蚀刻绝缘层堆叠而不暴露光敏半导体区域。然后基于已建立的栅极蚀刻工艺去除栅极结构中的多晶硅，栅极绝缘层保持光敏半导体材料的完整性。

Public/Granted literature

US20120187461A1 SEMICONDUCTOR COMPONENT WITH A WINDOW OPENING AS AN INTERFACE FOR AMBIENT COUPLING Public/Granted day:2012-07-26

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3205	......非绝缘层的沉积，例如绝缘层上的导电层或电阻层；这些层的后处理（电极的制造入H01L21/28）
H01L21/321	.......后处理
H01L21/3213	........对该层进行物理的或化学的腐蚀，例如由预沉积的外延层产生一个形成图形的层