发明授权
- 专利标题: Detection device manufacturing method, detection device, and detection system
- 专利标题(中): 检测装置制造方法,检测装置和检测系统
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申请号: US13477472申请日: 2012-05-22
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公开(公告)号: US08866093B2公开(公告)日: 2014-10-21
- 发明人: Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
- 申请人: Kentaro Fujiyoshi , Chiori Mochizuki , Minoru Watanabe , Masato Ofuji , Keigo Yokoyama , Jun Kawanabe , Hiroshi Wayama
- 申请人地址: JP Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JP Tokyo
- 代理机构: Canon USA, Inc. IP Division
- 优先权: JP2011-122015 20110531; JP2011-209461 20110926
- 主分类号: G01T1/24
- IPC分类号: G01T1/24 ; H01L27/146
摘要:
In a method of manufacturing a detection device including a plurality of pixels arrayed on a substrate, the pixels each including a switch element and a conversion element including an impurity semiconductor layer disposed on an electrode, which is disposed above the switch element, which is isolated per pixel, and which is made of a transparent conductive oxide joined to the switch element, and further including an interlayer insulating layer, which is made of an organic material, which is disposed between the switch elements and the electrodes, and which covers the switch elements, the method includes insulating members each made of an inorganic material and disposed to cover the interlayer insulating layer between adjacent two of the electrodes in contact with the interlayer insulating layer, and forming an impurity semiconductor film covering the insulating members and the electrodes and becoming the impurity semiconductor layer.
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