发明授权
US08866221B2 Super junction semiconductor device comprising a cell area and an edge area
有权
超结半导体器件包括单元区域和边缘区域
- 专利标题: Super junction semiconductor device comprising a cell area and an edge area
- 专利标题(中): 超结半导体器件包括单元区域和边缘区域
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申请号: US13539973申请日: 2012-07-02
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公开(公告)号: US08866221B2公开(公告)日: 2014-10-21
- 发明人: Franz Hirler , Hans Weber , Hans-Joachim Schulze , Uwe Wahl
- 申请人: Franz Hirler , Hans Weber , Hans-Joachim Schulze , Uwe Wahl
- 申请人地址: AT Villach
- 专利权人: Infineon Technologies Austria AG
- 当前专利权人: Infineon Technologies Austria AG
- 当前专利权人地址: AT Villach
- 代理机构: Murphy, Bilak & Homiller, PLLC
- 主分类号: H01L29/66
- IPC分类号: H01L29/66
摘要:
A drift layer of a super junction semiconductor device includes first portions of a first conductivity type and second portions of a second conductivity type opposite to the first conductivity type. The first and second portions are formed both in a cell area and in an edge area surrounding the cell area, wherein an on-state or forward current through the drift layer flows through the first portions in the cell area. At least one of the first and second portions other than the first portions in the cell area includes an auxiliary structure or contains auxiliary impurities to locally reduce the avalanche rate. Locally reducing the avalanche rate increases the total voltage blocking capability of the super junction semiconductor device.