公开(公告)号：US20140001552A1

公开(公告)日：2014-01-02

申请号：US13539973

申请日：2012-07-02

申请人： Franz Hirler ,  Hans Weber ,  Hans-Joachim Schulze ,  Uwe Wahl

发明人： Franz Hirler ,  Hans Weber ,  Hans-Joachim Schulze ,  Uwe Wahl

IPC分类号： H01L29/772 ,  H01L21/20 ,  H01L29/02

CPC分类号： H01L29/66712 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/161 ,  H01L29/167 ,  H01L29/408 ,  H01L29/7395 ,  H01L29/7811 ,  H01L29/8611

摘要： A drift layer of a super junction semiconductor device includes first portions of a first conductivity type and second portions of a second conductivity type opposite to the first conductivity type. The first and second portions are formed both in a cell area and in an edge area surrounding the cell area, wherein an on-state or forward current through the drift layer flows through the first portions in the cell area. At least one of the first and second portions other than the first portions in the cell area includes an auxiliary structure or contains auxiliary impurities to locally reduce the avalanche rate. Locally reducing the avalanche rate increases the total voltage blocking capability of the super junction semiconductor device.

摘要翻译： 超结半导体器件的漂移层包括第一导电类型的第一部分和与第一导电类型相反的第二导电类型的第二部分。 第一和第二部分在单元区域和围绕单元区域的边缘区域中形成，其中通过漂移层的导通状态或正向电流流过单元区域中的第一部分。 电池区域中除了第一部分之外的第一和第二部分中的至少一个包括辅助结构或包含辅助杂质以局部降低雪崩率。 本地降低雪崩率提高了超结半导体器件的总电压阻断能力。

公开(公告)号：US08866221B2

公开(公告)日：2014-10-21

申请号：US13539973

申请日：2012-07-02

申请人： Franz Hirler ,  Hans Weber ,  Hans-Joachim Schulze ,  Uwe Wahl

发明人： Franz Hirler ,  Hans Weber ,  Hans-Joachim Schulze ,  Uwe Wahl

IPC分类号： H01L29/66

CPC分类号： H01L29/66712 ,  H01L29/0634 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/161 ,  H01L29/167 ,  H01L29/408 ,  H01L29/7395 ,  H01L29/7811 ,  H01L29/8611

摘要： A drift layer of a super junction semiconductor device includes first portions of a first conductivity type and second portions of a second conductivity type opposite to the first conductivity type. The first and second portions are formed both in a cell area and in an edge area surrounding the cell area, wherein an on-state or forward current through the drift layer flows through the first portions in the cell area. At least one of the first and second portions other than the first portions in the cell area includes an auxiliary structure or contains auxiliary impurities to locally reduce the avalanche rate. Locally reducing the avalanche rate increases the total voltage blocking capability of the super junction semiconductor device.

摘要翻译： 超结半导体器件的漂移层包括第一导电类型的第一部分和与第一导电类型相反的第二导电类型的第二部分。 第一和第二部分在单元区域和围绕单元区域的边缘区域中形成，其中通过漂移层的导通状态或正向电流流过单元区域中的第一部分。 电池区域中除了第一部分之外的第一和第二部分中的至少一个包括辅助结构或包含辅助杂质以局部降低雪崩率。 本地降低雪崩率提高了超结半导体器件的总电压阻断能力。

公开(公告)号：US20130307058A1

公开(公告)日：2013-11-21

申请号：US13475302

申请日：2012-05-18

申请人： Uwe Wahl ,  Franz Hirler ,  Hans Weber

发明人： Uwe Wahl ,  Franz Hirler ,  Hans Weber

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/20

CPC分类号： H01L29/0634 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66143 ,  H01L29/66333 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface. A superjunction structure in the semiconductor body includes drift regions of a first conductivity type and compensation structures alternately disposed in a first direction parallel to the first surface. Each of the charge compensation structures includes a first semiconductor region of a second conductivity type complementary to the first conductivity type and a first trench including a second semiconductor region of the second conductivity type adjoining the first semiconductor region. The first semiconductor region and the first trench are disposed one after another in a second direction perpendicular to the first surface.

摘要翻译： 半导体器件包括具有第一表面和与第一表面相对的第二表面的半导体本体。 半导体主体中的超结构结构包括第一导电类型的漂移区域和在与第一表面平行的第一方向上交替设置的补偿结构。 每个电荷补偿结构包括与第一导电类型互补的第二导电类型的第一半导体区域和包括与第一半导体区域相邻的第二导电类型的第二半导体区域的第一沟槽。 第一半导体区域和第一沟槽在垂直于第一表面的第二方向上依次布置。

公开(公告)号：US20130249602A1

公开(公告)日：2013-09-26

申请号：US13429579

申请日：2012-03-26

申请人： Anton Mauder ,  Franz Hirler ,  Joachim Weyers ,  Uwe Wahl

发明人： Anton Mauder ,  Franz Hirler ,  Joachim Weyers ,  Uwe Wahl

IPC分类号： H03K3/00 ,  H01L29/78

CPC分类号： H01L29/7811 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7801 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/7825 ,  H01L29/7838 ,  H01L29/8605 ,  H01L29/8611

摘要： A semiconductor arrangement includes a semiconductor body and a power transistor including a source region, a drain region, a body region and a drift region arranged in the semiconductor body, a gate electrode arranged adjacent to the body region and dielectrically insulated from the body region by a gate dielectric. The semiconductor arrangement further includes a high voltage device arranged within a well-like dielectric structure in the semiconductor body and comprising a further drift region.

摘要翻译： 半导体装置包括半导体本体和功率晶体管，功率晶体管包括布置在半导体本体中的源区域，漏极区域，体区域和漂移区域，与主体区域相邻布置并与身体区域介电绝缘的栅电极， 栅极电介质。 半导体装置还包括布置在半导体本体内的类似阱介质结构内的高电压装置，并且包括另外的漂移区域。

公开(公告)号：US20060118862A1

公开(公告)日：2006-06-08

申请号：US11262483

申请日：2005-10-28

申请人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rub ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schaffer

发明人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rub ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schaffer

IPC分类号： H01L29/94

CPC分类号： H01L29/66689 ,  H01L21/26586 ,  H01L29/0696 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66666 ,  H01L29/66704 ,  H01L29/78 ,  H01L29/7825

摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

公开(公告)号：US09087707B2

公开(公告)日：2015-07-21

申请号：US13429579

申请日：2012-03-26

申请人： Anton Mauder ,  Franz Hirler ,  Joachim Weyers ,  Uwe Wahl

发明人： Anton Mauder ,  Franz Hirler ,  Joachim Weyers ,  Uwe Wahl

IPC分类号： H01L29/78 ,  H03K3/00 ,  H01L27/06 ,  H01L27/088 ,  H01L29/40 ,  H01L29/861 ,  H01L29/8605 ,  H01L29/06

CPC分类号： H01L29/7811 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/404 ,  H01L29/407 ,  H01L29/7801 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/7825 ,  H01L29/7838 ,  H01L29/8605 ,  H01L29/8611

摘要： A semiconductor arrangement includes a semiconductor body and a power transistor including a source region, a drain region, a body region and a drift region arranged in the semiconductor body, a gate electrode arranged adjacent to the body region and dielectrically insulated from the body region by a gate dielectric. The semiconductor arrangement further includes a high voltage device arranged within a well-like dielectric structure in the semiconductor body and comprising a further drift region.

摘要翻译： 半导体装置包括半导体本体和功率晶体管，功率晶体管包括布置在半导体本体中的源区域，漏极区域，体区域和漂移区域，与主体区域相邻布置并与身体区域介电绝缘的栅电极， 栅极电介质。 半导体装置还包括布置在半导体本体内的类似阱介质结构内的高电压装置，并且包括另外的漂移区域。

公开(公告)号：US20060006386A1

公开(公告)日：2006-01-12

申请号：US10926581

申请日：2004-08-25

申请人： Franz Hirler ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Uwe Wahl ,  Gerald Deboy ,  Ralf Henninger

发明人： Franz Hirler ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Uwe Wahl ,  Gerald Deboy ,  Ralf Henninger

IPC分类号： H01L29/04

CPC分类号： H01L29/407 ,  H01L29/0847 ,  H01L29/0852 ,  H01L29/404 ,  H01L29/4175 ,  H01L29/4232 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7393 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/8611 ,  H01L29/872

摘要： A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.

摘要翻译： 描述半导体部件。 在一个实施例中，半导体部件包括具有第一侧和第二侧的半导体本体。 提供了漂移区，其布置在第一侧下方的半导体本体中，并且在第一和第二掺杂末端区之间沿半导体本体的第一横向方向延伸。 设置至少一个场电极，其布置在漂移区中，从第一侧延伸到漂移区，并且以与半导体本体电绝缘的方式配置。

公开(公告)号：US07777278B2

公开(公告)日：2010-08-17

申请号：US12020197

申请日：2008-01-25

申请人： Franz Hirler ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Gerald Deboy ,  Ralf Henninger ,  Uwe Wahl

发明人： Franz Hirler ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Gerald Deboy ,  Ralf Henninger ,  Uwe Wahl

IPC分类号： H01L21/336

CPC分类号： H01L29/407 ,  H01L29/0847 ,  H01L29/0852 ,  H01L29/404 ,  H01L29/4175 ,  H01L29/4232 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7393 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/8611 ,  H01L29/872

摘要： A semiconductor component is described. In one embodiment, the semiconductor component includes a semiconductor body with a first side and a second side. A drift zone is provided, which is arranged in the semiconductor body below the first side and extends in a first lateral direction of the semiconductor body between a first and a second doped terminal zone. At least one field electrode is provided, which is arranged in the drift zone, extends into the drift zone proceeding from the first side and is configured in a manner electrically insulated from the semiconductor body.

摘要翻译： 描述半导体部件。 在一个实施例中，半导体部件包括具有第一侧和第二侧的半导体本体。 提供了漂移区，其布置在第一侧下方的半导体本体中，并且在第一和第二掺杂末端区之间沿半导体本体的第一横向方向延伸。 设置至少一个场电极，其布置在漂移区中，从第一侧延伸到漂移区，并且以与半导体本体电绝缘的方式配置。

公开(公告)号：US08431988B2

公开(公告)日：2013-04-30

申请号：US11262483

申请日：2005-10-28

申请人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rüb ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schäffer

发明人： Franz Hirler ,  Uwe Wahl ,  Thorsten Meyer ,  Michael Rüb ,  Armin Willmeroth ,  Markus Schmitt ,  Carolin Tolksdorf ,  Carsten Schäffer

IPC分类号： H01L29/66

CPC分类号： H01L29/66689 ,  H01L21/26586 ,  H01L29/0696 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/41758 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66666 ,  H01L29/66704 ,  H01L29/78 ,  H01L29/7825

摘要： A lateral trench transistor has a semiconductor body having a source region, a source contact, a body region, a drain region, and a gate trench, in which a gate electrode which is isolated from the semiconductor body is embedded. A heavily doped semiconductor region is provided within the body region or adjacent to it, and is electrically connected to the source contact, and whose dopant type corresponds to that of the body region.

摘要翻译： 横向沟槽晶体管具有半导体本体，其具有嵌入与半导体本体隔离的栅电极的源极区，源极接触，体区，漏极区和栅极沟槽。 重掺杂半导体区域设置在体区内或与其相邻，并且与源极接触电连接，并且其掺杂剂类型对应于身体区域。

公开(公告)号：US07126186B2

公开(公告)日：2006-10-24

申请号：US10324823

申请日：2002-12-20

申请人： Hans Weber ,  Armin Willmeroth ,  Uwe Wahl ,  Markus Schmitt

发明人： Hans Weber ,  Armin Willmeroth ,  Uwe Wahl ,  Markus Schmitt

IPC分类号： H10L21/336 ,  H01L31/062

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/41766 ,  H01L2924/0002 ,  H01L2924/00

摘要： A compensation component and a process for production thereof includes a semiconductor body having first and second electrodes, a drift zone disposed therebetween, and areas of a first conductivity type and a second conductivity type opposite the first conductivity type disposed in the drift zone. Higher doped zones of the first type are inlaid in a weaker doped environment of the second type closer to the first electrode and higher doped zones of the second type are inlaid in a weaker doped environment of the first type closer to the second electrode. The drift zone is complementary so that, in a direction between the electrodes, a more highly doped zone of the first type adjoins a more weakly doped environment of the first type, and a more weakly doped environment of the second type adjoins a more highly doped zone of the second type.