Invention Grant
- Patent Title: Methods of forming bonded semiconductor structures
- Patent Title (中): 形成键合半导体结构的方法
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Application No.: US13937779Application Date: 2013-07-09
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Publication No.: US08866305B2Publication Date: 2014-10-21
- Inventor: Mariam Sadaka , Ionut Radu
- Applicant: Soitec
- Applicant Address: FR Bernin
- Assignee: SOITEC
- Current Assignee: SOITEC
- Current Assignee Address: FR Bernin
- Agency: TraskBritt
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L21/768 ; H01L23/00 ; H01L21/20 ; H01L25/00 ; H01L27/06 ; H01L21/683

Abstract:
Methods of forming bonded semiconductor structures include temporarily, directly bonding together semiconductor structures, thinning at least one of the semiconductor structures, and subsequently permanently bonding the thinned semiconductor structure to another semiconductor structure. The temporary, direct bond may be established without the use of an adhesive. Bonded semiconductor structures are fabricated in accordance with such methods.
Public/Granted literature
- US20130299997A1 METHODS OF FORMING BONDED SEMICONDUCTOR STRUCTURES Public/Granted day:2013-11-14
Information query
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