Invention Grant
US08869008B2 Adaptation of analog memory cell read thresholds using partial ECC syndromes
有权
使用部分ECC综合征适应模拟存储器单元读取阈值
- Patent Title: Adaptation of analog memory cell read thresholds using partial ECC syndromes
- Patent Title (中): 使用部分ECC综合征适应模拟存储器单元读取阈值
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Application No.: US13743721Application Date: 2013-01-17
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Publication No.: US08869008B2Publication Date: 2014-10-21
- Inventor: Barak Baum , Micha Anholt
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F11/10 ; H03M13/15

Abstract:
A method includes storing data that is encoded with an Error Correction Code (ECC) in a group of analog memory cells. The memory cells in the group are read using multiple sets of read thresholds. The memory cells in the group are divided into two or more subsets. N partial syndromes of the ECC are computed, each partial syndrome computed over readout results that were read using a respective set of the read thresholds from a respective subset of the memory cells. For each possible N-bit combination of N bit values at corresponding bit positions in the N partial syndromes, a respective count of the bit positions in which the combination occurs is determined, so as to produce a plurality of counts. An optimal set of read thresholds is calculated based on the counts, and data recovery is performed using the optimal read thresholds.
Public/Granted literature
- US20140201596A1 Adaptation of Analog Memory Cell Read Thresholds Using Partial ECC Syndromes Public/Granted day:2014-07-17
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