Invention Grant
- Patent Title: High pressure apparatus and method for nitride crystal growth
- Patent Title (中): 用于氮化物晶体生长的高压装置和方法
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Application No.: US13013697Application Date: 2011-01-25
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Publication No.: US08871024B2Publication Date: 2014-10-28
- Inventor: Mark P. D'Evelyn
- Applicant: Mark P. D'Evelyn
- Applicant Address: US CA Fremont
- Assignee: Soraa, Inc.
- Current Assignee: Soraa, Inc.
- Current Assignee Address: US CA Fremont
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: C30B7/08
- IPC: C30B7/08 ; B01J3/06 ; B01J3/04 ; B01J3/00 ; C30B29/40 ; C30B7/10
Abstract:
An improved high pressure apparatus and methods for processing supercritical fluids is described. The apparatus includes a capsule, a heater, and at least one ceramic ring contained by a metal sleeve. The apparatus is capable of accessing pressures and temperatures of 0.2-2 GPa and 400-1200° C.
Public/Granted literature
- US20110183498A1 High Pressure Apparatus and Method for Nitride Crystal Growth Public/Granted day:2011-07-28
Information query
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