公开(公告)号：US08323405B2

公开(公告)日：2012-12-04

申请号：US12534849

申请日：2009-08-03

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: C30B17/00

CPC classification number: B01J3/008 ,  B01J3/062 ,  B01J2203/0665 ,  B01J2203/068 ,  C30B7/10 ,  C30B29/406 ,  Y10T117/1096

Abstract: An apparatus and associated method for large-scale manufacturing of gallium nitride is provided. The apparatus comprises a large diameter autoclave and a raw material basket. Methods include metered addition of dopants in the raw material and control of the atmosphere during crystal growth. The apparatus and methods are scalable up to very large volumes and are cost effective.

Abstract translation: 提供了用于大规模制造氮化镓的装置和相关方法。 该装置包括大直径高压釜和原料篮。 方法包括在原料中计量添加掺杂剂并在晶体生长期间控制大气。 该设备和方法可扩展到非常大的体积，并且具有成本效益。

公开(公告)号：US08284810B1

公开(公告)日：2012-10-09

申请号：US12534838

申请日：2009-08-03

Applicant: Rajat Sharma ,  Eric M. Hall ,  Christiane Poblenz ,  Mark P. D'Evelyn

Inventor： Rajat Sharma ,  Eric M. Hall ,  Christiane Poblenz ,  Mark P. D'Evelyn

IPC: H01S5/00

CPC classification number: H01S5/3202 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/1085 ,  H01S5/2201 ,  H01S5/34333

Abstract: An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1 −2 ±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.

Abstract translation: 边缘发射固态激光器和方法。 激光器包括具有非极性或半极性取向的体GaN衬底上的至少一个AlInGaN有源层。 激光器的边缘包括{11-2±6}面。 激光器具有高增益，低阈值电流，能够在高电流密度下进行扩展操作，并且可以以提高的产量制造。 该激光器可用于光学数据存储，投影显示器和一般照明源。

公开(公告)号：US08148801B2

公开(公告)日：2012-04-03

申请号：US12546458

申请日：2009-08-24

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: H01L29/20

CPC classification number: C30B29/403 ,  C30B7/105 ,  C30B23/025 ,  C30B25/18 ,  C30B33/06 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/056 ,  H01L2224/11 ,  H01L2224/81005 ,  H01L2224/81224 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

Abstract: A nitride crystal or wafer with a removable surface layer comprises a high quality nitride base crystal, a release layer, and a high quality epitaxial layer. The release layer has a large optical absorption coefficient at wavelengths where the base crystal is substantially transparent and may be etched under conditions where the nitride base crystal and the high quality epitaxial layer are not. The high quality epitaxial layer may be removed from the nitride base crystal by laser liftoff or by chemical etching after deposition of at least one epitaxial device layer. The nitride crystal with a removable surface layer is useful as a substrate for a light emitting diode, a laser diode, a transistor, a photodetector, a solar cell, or for photoelectrochemical water splitting for hydrogen generation.

Abstract translation: 具有可移除表面层的氮化物晶体或晶片包括高质量氮化物基晶，释放层和高质量外延层。 释放层在基底基本上是透明的波长处具有大的光吸收系数，并且可以在不具有氮化物基底和高质量外延层的条件下进行蚀刻。 可以通过激光剥离或通过在沉积至少一个外延器件层之后的化学蚀刻从氮化物基底晶体去除高质量的外延层。 具有可移除表面层的氮化物晶体可用作发光二极管，激光二极管，晶体管，光电检测器，太阳能电池或用于氢发生的光电化学水分解的衬底。

公开(公告)号：US20110220912A1

公开(公告)日：2011-09-15

申请号：US13041199

申请日：2011-03-04

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: H01L29/20 ,  H01L21/20

CPC classification number: H01L21/3221 ,  C30B7/105 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/02667 ,  H01L33/32

Abstract: A large-area, high-purity, low-cost single crystal semi-insulating gallium nitride that is useful as substrates for fabricating GaN devices for electronic and/or optoelectronic applications is provided. The gallium nitride is formed by doping gallium nitride material during ammonothermal growth with a deep acceptor dopant species, e.g., Mn, Fe, Co, Ni, Cu, etc., to compensate donor species in the gallium nitride, and impart semi-insulating character to the gallium nitride.

Abstract translation: 提供了一种大面积，高纯度，低成本的单晶半绝缘氮化镓，其可用作用于制造用于电子和/或光电应用的GaN器件的基板。 氮化镓通过在氮热处理生长期间掺杂氮化镓材料而形成，其中使用了深受主掺杂物质，例如Mn，Fe，Co，Ni，Cu等，以补偿氮化镓中的供体物质，并赋予半绝缘特性 到氮化镓。

公开(公告)号：US09157167B1

公开(公告)日：2015-10-13

申请号：US13556105

申请日：2012-07-23

Applicant: Rajeev T. Pakalapati ,  Mark P. D'Evelyn

Inventor： Rajeev T. Pakalapati ,  Mark P. D'Evelyn

IPC: C30B7/10

CPC classification number: C30B7/10 ,  B01J3/008 ,  B01J3/042 ,  B01J3/065 ,  B01J2203/0665 ,  B01J2203/067 ,  B01J2203/068 ,  B30B11/002 ,  B30B11/005 ,  C30B29/403 ,  C30B29/406 ,  Y02P20/544 ,  Y10T117/10 ,  Y10T117/1024 ,  Y10T117/1096

Abstract: A high pressure apparatus and related methods for processing supercritical fluids are disclosed. In certain embodiments, the present apparatus includes a capsule, a heater, at least one ceramic ring or multiple rings, optionally, with one or more scribe marks and/or cracks present. In certain embodiments, the apparatus has a metal sleeve containing each ceramic ring. The apparatus also has a high strength enclosure, end flanges with associated insulation, and a power control system. In certain embodiments, a high pressure apparatus is constructed such that the diametric annular gap between the outer diameter of the heater and the ceramic ring is selected to provide radial load-bearing contact above a particular temperature and pressure. In certain embodiments, the apparatus is capable of accessing pressures of 0.2 GPa to 2 GPa and temperatures of 400° C. to 1200° C.

Abstract translation: 公开了一种用于加工超临界流体的高压装置和相关方法。 在某些实施方案中，本装置包括胶囊，加热器，至少一个陶瓷环或多个环，任选地，存在一个或多个划痕和/或裂纹。 在某些实施例中，该装置具有包含每个陶瓷环的金属套筒。 该设备还具有高强度外壳，具有相关绝缘的端部法兰和功率控制系统。 在某些实施例中，高压设备被构造成使得加热器外径与陶瓷环之间的直径环形间隙被选择成在特定温度和压力之上提供径向承载接触。 在某些实施方案中，该装置能够获得0.2GPa至2GPa的压力和400℃至1200℃的温度。

公开(公告)号：US08444765B2

公开(公告)日：2013-05-21

申请号：US13226249

申请日：2011-09-06

Applicant: Mark P. D'Evelyn

Inventor： Mark P. D'Evelyn

IPC: C30B7/10

CPC classification number: B01J3/008 ,  B01J3/062 ,  B01J2203/0665 ,  B01J2203/068 ,  C30B7/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1008

Abstract: A method for large-scale manufacturing of gallium nitride includes a process for reducing and/or minimizing contamination in the crystals, for solvent addition to an autoclave, for improving or optimizing the solvent atmosphere composition, for removal of the solvent from the autoclave, and for recycling of the solvent. The method is scalable up to large volumes and is cost effective.

Abstract translation: 用于大规模制造氮化镓的方法包括用于减少和/或最小化晶体中的污染物的方法，用于溶剂添加到高压釜中，用于改进或优化溶剂气氛组合物，用于从高压釜中除去溶剂;以及 用于回收溶剂。 该方法可扩展到大容量，并且具有成本效益。

公开(公告)号：US20120187412A1

公开(公告)日：2012-07-26

申请号：US13012674

申请日：2011-01-24

Applicant: Mark P. D'Evelyn ,  Arpan Chakraborty ,  William Houck

Inventor： Mark P. D'Evelyn ,  Arpan Chakraborty ,  William Houck

IPC: H01L29/20

CPC classification number: H01L33/32 ,  H01L21/6835 ,  H01L21/76254 ,  H01L24/29 ,  H01L24/83 ,  H01L29/02 ,  H01L29/0692 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/50 ,  H01L2221/68327 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/83193 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13062 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A gallium and nitrogen containing substrate structure includes a handle substrate member having a first surface and a second surface and a transferred thickness of gallium and nitrogen material. The structure has a gallium and nitrogen containing active region grown overlying the transferred thickness and a recessed region formed within a portion of the handle substrate member. The substrate structure has a conductive material formed within the recessed region configured to transfer thermal energy from at least the transferred thickness of gallium and nitrogen material.

Abstract translation: 含镓和氮的衬底结构包括具有第一表面和第二表面以及转移的镓和氮材料厚度的手柄衬底构件。 该结构具有生长在转移厚度上的含镓和氮的活性区域和形成在手柄衬底构件的一部分内的凹陷区域。 衬底结构具有形成在凹陷区域内的导电材料，其被配置为从至少转移的镓和氮材料的厚度传递热能。

公开(公告)号：US20120187371A1

公开(公告)日：2012-07-26

申请号：US13360535

申请日：2012-01-27

Applicant: James W. Raring ,  Eric M. Hall ,  Mark P. D'Evelyn

Inventor： James W. Raring ,  Eric M. Hall ,  Mark P. D'Evelyn

IPC: H01L33/06 ,  H01L29/20 ,  B82Y99/00

CPC classification number: H01L33/502 ,  H01L33/16 ,  H01L33/32 ,  H01L33/54 ,  H01L33/58 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01037 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A packaged optical device includes a substrate having a surface region with light emitting diode devices fabricated on a semipolar or nonpolar GaN substrate. The LEDs emit polarized light and are characterized by an overlapped electron wave function and a hole wave function. Phosphors within the package are excited by the polarized light and, in response, emit electromagnetic radiation of a second wavelength.

Abstract translation: 封装的光学器件包括具有在半极性或非极性GaN衬底上制造的发光二极管器件的表面区域的衬底。 LED发射偏振光，其特征在于重叠的电子波函数和空穴波函数。 封装内的荧光体被偏振光激发，并且响应地发射第二波长的电磁辐射。

公开(公告)号：US07101433B2

公开(公告)日：2006-09-05

申请号：US10699504

申请日：2003-10-31

Applicant: Mark P. D'Evelyn ,  Robert V. Leonelli, Jr. ,  Peter S. Allison ,  Kristi J. Narang ,  Robert A. Giddings

Inventor： Mark P. D'Evelyn ,  Robert V. Leonelli, Jr. ,  Peter S. Allison ,  Kristi J. Narang ,  Robert A. Giddings

IPC: C30B29/40

CPC classification number: B01J3/065 ,  B01J3/062 ,  B01J2203/0655 ,  B01J2203/0665 ,  B30B15/34 ,  Y10T117/1004

Abstract: A high temperature/high pressure (HP/HT) apparatus for converting feedstock housed in a capsule into product crystals, comprising at least two electrical heating paths for independent control of both the mean temperature in the reaction cell and the temperature gradient across the reaction cell.

Abstract translation: 用于将容纳在胶囊中的原料转化成产品晶体的高温/高压（HP / HT）装置，包括用于独立控制反应池中的平均温度和跨过反应池的温度梯度的至少两个电加热路径 。

公开(公告)号：US06596040B2

公开(公告)日：2003-07-22

申请号：US10174914

申请日：2002-06-19

Applicant: Aaron W. Saak ,  Mark P. D'Evelyn ,  Chung S. Kim ,  Michael H. Zimmerman ,  Steven W. Webb

Inventor： Aaron W. Saak ,  Mark P. D'Evelyn ,  Chung S. Kim ,  Michael H. Zimmerman ,  Steven W. Webb

IPC: C09K314

CPC classification number: B24D3/14 ,  C09K3/1436

Abstract: Coated abrasive particle for use in vitreous bond matrices, which particle is coated with between 1 and about 50 coating layers. Each coating layer ranges in thickness from between about 0.1 and 50 microns. Each layer has the composition, MCxNyBzOw, where, M represents one or more of Ti, Si, V, Cr, Zr, Nb, Mo, Hf, Ta, W, Re or a rare earth metal, and w, x, y, and z, each range from between 0 and 3. The outermost coating layer has a concentration of oxygen that is higher by a factor of at least about 2 than the layer in direct contact with the abrasive particle.

Abstract translation: 用于玻璃质基质的涂覆磨料颗粒，该颗粒涂覆有1至约50个涂层。 每个涂层的厚度范围为约0.1-50微米。 每层具有组成为MCxNyBzOw，其中M表示Ti，Si，V，Cr，Zr，Nb，Mo，Hf，Ta，W，Re或稀土金属中的一种或多种，​​w，x，y， 和z，每个范围在0和3之间。最外涂层的氧浓度比直接与磨料颗粒接触的层高至少约2倍。