发明授权
- 专利标题: Plasma annealing of thin film solar cells
- 专利标题(中): 薄膜太阳能电池的等离子体退火
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申请号: US13571048申请日: 2012-08-09
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公开(公告)号: US08871560B2公开(公告)日: 2014-10-28
- 发明人: Shafaat Ahmed , Sukjay Chey , Hariklia Deligianni , Lubomyr T. Romankiw
- 申请人: Shafaat Ahmed , Sukjay Chey , Hariklia Deligianni , Lubomyr T. Romankiw
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号: H01L31/032
- IPC分类号: H01L31/032 ; H01L31/0749
摘要:
Embodiments relate to a method for annealing a solar cell structure including forming an absorber layer on a molybdenum (Mo) layer of a solar cell base structure. The solar cell base structure includes a substrate and the Mo layer is located on the substrate. The absorber layer includes a semiconductor chalcogenide material. Annealing the solar cell base structure is performed by exposing an outer layer of the solar cell base structure to a plasma.
公开/授权文献
- US20140045295A1 PLASMA ANNEALING OF THIN FILM SOLAR CELLS 公开/授权日:2014-02-13
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