发明授权
- 专利标题: Light emitting diode chip
- 专利标题(中): 发光二极管芯片
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申请号: US13581417申请日: 2011-02-15
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公开(公告)号: US08872209B2公开(公告)日: 2014-10-28
- 发明人: Markus Maute , Karl Engl , Stefanie Rammelsberger , Nikolaus Gmeinwieser , Johann Eibl
- 申请人: Markus Maute , Karl Engl , Stefanie Rammelsberger , Nikolaus Gmeinwieser , Johann Eibl
- 申请人地址: DE
- 专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人地址: DE
- 代理机构: DLA Piper LLP (US)
- 优先权: DE102010009717 20100301
- 国际申请: PCT/EP2011/052233 WO 20110215
- 国际公布: WO2011/107344 WO 20110909
- 主分类号: H01L33/60
- IPC分类号: H01L33/60 ; H01L33/38 ; H01L33/40 ; H01L33/20 ; H01L33/46
摘要:
A light emitting diode chip includes a semiconductor layer sequence, the semiconductor layer sequence having an active layer that generates electromagnetic radiation, wherein the light emitting diode chip has a radiation exit area at a front side. At a rear side lying opposite the radiation exit area, the light emitting diode chip has, at least in regions, a mirror layer containing silver. A functional layer that reduces corrosion and/or improves adhesion of the mirror layer is arranged on the mirror layer, wherein a material from which the functional layer is formed is also distributed in the entire mirror layer. The material of the functional layer has a concentration gradient in the mirror layer, wherein the concentration of the material of the functional layer in the mirror layer decreases proceeding from the functional layer in the direction toward the semiconductor layer sequence.
公开/授权文献
- US20130146910A1 LIGHT EMITTING DIODE CHIP 公开/授权日:2013-06-13
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