发明授权
- 专利标题： Semiconductor structure and method for forming the same
- 专利标题（中）： 半导体结构及其形成方法
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申请号： US13405001申请日： 2012-02-24
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公开(公告)号： US08872222B2公开(公告)日： 2014-10-28
- 发明人: Ching-Lin Chan , Chen-Yuan Lin , Cheng-Chi Lin , Shih-Chin Lien
- 申请人： Ching-Lin Chan , Chen-Yuan Lin , Cheng-Chi Lin , Shih-Chin Lien
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： McClure, Qualey & Rodack, LLP
- 主分类号： H01L29/739
- IPC分类号： H01L29/739 ; H01L21/331
摘要：
A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a first doped region, a second doped region, a doped strip and a top doped region. The first doped region has a first type conductivity. The second doped region is formed in the first doped region and has a second type conductivity opposite to the first type conductivity. The doped strip is formed in the first doped region and has the second type conductivity. The top doped region is formed in the doped strip and has the first type conductivity. The top doped region has a first sidewall and a second sidewall opposite to the first sidewall. The doped strip is extended beyond the first sidewall or the second sidewall.
公开/授权文献
- US20130221404A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME 公开/授权日：2013-08-29
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